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AH312 / ECP200G
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
Product Features
* 400 - 2300 MHz * +33 dBm P1dB * +51 dBm Output IP3 * 18 dB Gain @ 900 MHz * 11 dB Gain @ 1960 MHz * Single Positive Supply (+5V)
* Lead-free/green/RoHS-compliant SOIC-8 SMT Pkg.
Product Description
The AH312 / ECP200 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband-tuned application circuits with up to +49 dBm OIP3 and +33 dBm of compressed 1dB power. It is housed in a lead-free/green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. The AH312 / ECP200 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the AH312 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations.
Functional Diagram
1 8 7 6 5
2 3
4
Applications
* Final stage amplifiers for Repeaters * Mobile Infrastructure * Defense / Homeland Security
Function Vref Input Output Vbias GND N/C or GND
Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5
Specifications (1)
Parameter
Operational Bandwidth Test Frequency Gain Input R.L. Output R.L. Output P1dB Output IP3 (2) IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
Typical Performance (4)
Units Min
MHz MHz dB dB dB dBm dBm dBm dBm dB mA V 700 400 9 2140 10 20 6.8 +33.2 +48 +27.5 +25.3 7.7 800 +5 900
Typ
Max
2300
Parameter
Frequency S21 - Gain S11 - Input R.L. S22 - Output R.L. Output P1dB Output IP3 IS-95A Channel Power
@ -45 dBc ACPR
Units
MHz dB dB dB dBm dBm dBm dBm dB 8.0 900 18 -18 -11 +33 +49 +27
Typical
1960 11 -19 -6.8 +33.4 +51 +27.5 +25.3 7.3 7.7 +5 V @ 800 mA 2140 10 -20 -6.8 +33.2 +48
+32 +47
W-CDMA Channel Power
@ -45 dBc ACLR
W-CDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure Operating Current Range, Icc (3) Device Voltage, Vcc
Noise Figure Device Bias (3)
4. Typical parameters reflect performance in a tuned application circuit at +25 C.
1. Test conditions unless otherwise noted: 25C, +5V Vsupply, 2140 MHz, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 200 mA at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 22mA of current when used with a series bias resistor of R1=15. (ie. total device current typically will be 822 mA.)
Absolute Maximum Rating
Parameter
Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature
Ordering Information
Part No.
AH312-S8* ECP200G* AH312-S8G AH312-S8PCB900 AH312-S8PCB1960 AH312-S8PCB2140
Rating
-40 to +85 C -65 to +150 C +28 dBm +8 V 1400 mA 8W +250 C
Description
2 Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
2 Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
2 Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
900 MHz Evaluation Board 1960 MHz Evaluation Board 2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
* This package is being phased out in favor of the green package type which is backwards compatible for existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website. Specifications and information are subject to change without notice. Page 1 of 9 June 2005
WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com
AH312 / ECP200G
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
Typical Device Data
S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25C, unmatched 50 ohm system)
40 35 30 25 Gain (dB) 20 15 10 5 0 -5 -10 0 0.5 1 1.5 Frequency (GHz) 2 2.5
.4 -0
2. 0
2. 0
DB(|S[2,1]|)
DB(GMax)
0. 4
6 0.
6 0.
Swp Max 3GHz
1.0
0.8
0.8
1.0
Gain / Maximum Stable Gain
S11
S22
Swp Max 3GHz
0 3.
0 4.
10.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
-0
.4
-0
-0 .6
.6
.0 -2
.0 -2
Swp Min 0.05GHz
Swp Min 0.05GHz
-0.8
-0.8
Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance plots are shown from 50 - 3000 MHz, with markers placed at 0.5 - 3.0 GHz in 0.5 GHz increments. S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000
-0.86 -0.64 -0.68 -0.76 -0.93 -1.15 -1.50 -2.39 -4.47 -11.96 -8.66 -2.76 -1.21 -0.68 -0.43 -0.32 -0.29
-178.06 178.18 172.85 164.33 155.56 146.04 134.58 121.66 104.01 86.06 -179.11 159.91 142.90 130.93 121.91 114.61 108.16
27.55 22.16 16.13 10.61 7.46 5.78 4.87 4.74 5.33 5.96 4.41 0.53 -3.21 -7.27 -10.41 -13.28 -15.94
113.72 98.81 89.06 77.31 67.94 57.62 46.90 32.96 14.01 -17.55 -56.78 -89.86 -107.99 -123.14 -134.93 -143.22 -149.93
-1.0
-45.75 -45.46 -42.65 -43.96 -41.17 -41.65 -40.36 -40.22 -38.97 -38.96 -39.35 -43.55 -41.56 -42.46 -39.71 -40.99 -39.65
30.91 12.80 6.09 4.69 6.70 -5.78 -7.84 -16.51 -48.82 -86.32 -144.53 145.94 104.25 73.64 64.28 58.20 48.40
-0.38 -0.38 -0.48 -0.48 -0.61 -0.66 -0.71 -0.80 -0.76 -0.60 -0.52 -0.41 -0.54 -0.68 -0.73 -0.73 -0.79
-1.0
-130.98 -157.30 -172.51 177.51 173.63 170.49 169.31 168.22 167.91 170.63 167.41 164.50 160.11 157.84 154.66 151.14 147.52
Application Circuit PC Board Layout
Circuit Board Material: .014" Getek, single layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning shunt capacitors - C8 and C9. The markers and vias are spaced in .050" increments.
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 2 of 9 June 2005
-4 .0 - 5. 0
-3 .0
-4 .0 -5 . 0
2 - 0.
2 - 0.
-10.0
0.2
0 5.
0. 4
-10. 0
0 3.
4.
0
5.0
-3 .0
0.2
10.0
AH312 / ECP200G
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
900 MHz Application Circuit (AH312-S8PCB900)
Typical RF Performance at 25C
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+17 dBm / tone, 1 MHz spacing)
900 MHz 18 dB -18 dB -11 dB +33 dBm +49 dBm +27 dBm 8.0 dB +5 V 800 mA
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure Device / Supply Voltage Quiescent Current (1)
1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency
S11 vs. Frequency
S22 vs. Frequency
20 19 S21 (dB) S11 (dB) 18 17 16
+25C -40C +85C
0 -5 -10 -15 -20 -25 920 940 -30 840 860 880 900 920 940
+25C -40C +85C
0 -5 S22 (dB) -10 -15
+25C -40C +85C
15 840
860
880
900
-20 840
860
880
900
920
940
Frequency (MHz)
Noise Figure vs. Frequency
10 8 P1dB (dBm) NF (dB) 6 4 2 0 840 36 34
Frequency (MHz)
P1dB vs. Frequency
Circuit boards are optimized at 880 MHz
Frequency (MHz)
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 900 MHz
-40
ACPR (dBc)
-40C
860 880
32 30 28 26 840
-50
-60
-40 C +25 C +85 C
-40C
860 880
+25C
900
+85C
920 940
+25C
900
+85C
-70
920 940
22
23
24
25
26
27
28
29
Frequency (MHz)
Frequency (MHz)
Output Channel Power (dBm)
OIP3 vs. Output Power 55 50 45 40 35
freq. = 900 MHz, 901 MHz, +25 C
OIP3 vs. Frequency 55 50 45 40 35 840
+25 C, +17 dBm/tone
OIP3 vs. Temperature 55 50 45 40 35 -40
freq. = 900 MHz, 901 MHz, +17 dBm/tone
OIP3 (dBm)
OIP3 (dBm)
860
880 900 Frequency (MHz)
920
940
-15
10 35 Temperature (C)
60
85
OIP3 (dBm)
12
14
16 18 20 22 Output Power (dBm)
24
26
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 3 of 9 June 2005
AH312 / ECP200G
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
1960 MHz Application Circuit (AH312-S8PCB1960)
Typical RF Performance at 25C
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+17 dBm / tone, 1 MHz spacing)
1960 MHz 11 dB -20 dB -6.8 dB +33.4 dBm +51 dBm +27.5 dBm 7.3 dB +5 V 800 mA
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure Device / Supply Voltage Quiescent Current (1)
1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency
S11 vs. Frequency
S22 vs. Frequency
13 12 S21 (dB) S11 (dB) 11 10 9
+25C -40C +85C
0 -5 -10 -15 -20 -25 1980 1990 -30 1930 1940 1950 1960 1970 1980 1990
+25C -40C +85C
0 -5 S22 (dB) -10 -15
+25C -40C +85C
8 1930
1940
1950
1960
1970
-20 1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
Noise Figure vs. Frequency
10 8 NF (dB) 6 4 2 0 1930 P1dB (dBm) 36 34 32 30 28 26 1930
Frequency (MHz)
P1dB vs. Frequency
Circuit boards are optimized at 1960 MHz
Frequency (MHz)
ACPR vs. Channel Power -35 -45 -55 -65 -40 C -75
1990
IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 1960 MHz
-40C
1940 1950 1960
+25C
1970
+85C
1980 1990
-40C
1940 1950
+25C
1960 1970
+85C
1980
ACPR (dBc)
+25 C 26 27
+85 C 28 29
22
23
24
25
Frequency (MHz)
Frequency (MHz)
Output Channel Power (dBm) OIP3 vs. Output Power 55 50 45 40 35
freq. = 1960 MHz, 1961 MHz, +25 C
OIP3 vs. Frequency 55 50 45 40 35 1930
+25 C, +17 dBm/tone
OIP3 vs. Temperature 55 50 45 40 35 -40
freq. = 1960 MHz, 1961 MHz, +17 dBm/tone
OIP3 (dBm)
OIP3 (dBm)
1940
1950 1960 1970 Frequency (MHz)
1980
1990
-15
10 35 Temperature (C)
60
85
OIP3 (dBm)
12
14
16 18 Output Power (dBm)
20
22
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 4 of 9 June 2005
AH312 / ECP200G
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
2140 MHz Application Circuit (AH312-S8PCB2140)
Typical RF Performance at 25C
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+17 dBm / tone, 1 MHz spacing) (@ -45 dBc ACLR)
2140 MHz 10 dB -20 dB -6.8 dB +33.2 dBm +48 dBm +25.3 dBm 7.7 dB +5 V 800 mA
W-CDMA Channel Power Noise Figure Device / Supply Voltage Quiescent Current (1)
1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency
S11 vs. Frequency
S22 vs. Frequency
12 11 S21 (dB) S11 (dB) 10 9 8
+25C -40C +85C
0 -5 -10 -15 -20 -25 2160 2170 -30 2110 2120 2130 2140 2150 2160 2170
+25C -40C +85C
0 -5 S22 (dB) -10 -15
+25C -40C +85C
7 2110
2120
2130
2140
2150
-20 2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
Noise Figure vs. Frequency
10 8 P1dB (dBm) NF (dB) 6 4 2 0 2110 36 34
Frequency (MHz)
P1dB vs. Frequency
Circuit boards are optimized at 2140 MHz
Frequency (MHz)
ACPR vs. Channel Power
-35 -40 ACPR (dBc) -45 -50 -55
3GPP W -CDMA, Test Model 1+64 DPCH, 5 MHz offset, 2140 MHz
32 30 28 26 2110
-40C
2120 2130 2140
+25C
2150
+85C
2160 2170
-40C
2120 2130
+25C
2140 2150
+85C
2160 2170
-40 C
-60 22 23 24 25
+25 C
26
+85 C
27
Frequency (MHz)
Frequency (MHz)
Output Channel Power (dBm)
OIP3 vs. Frequency 55 50 45 40 35 2110
+25 C, +17 dBm/tone
OIP3 vs. Temperature 55 50 45 40 35 -40
freq. = 2140 MHz, 2141 MHz, +17 dBm/tone
OIP3 vs. Output Power 55 50 45 40 35
freq. = 2140 MHz, 2141 MHz, +25 C
OIP3 (dBm)
OIP3 (dBm)
2120
2130 2140 2150 Frequency (MHz)
2160
2170
-15
10 35 Temperature (C)
60
85
OIP3 (dBm)
12
14
16 18 Output Power (dBm)
20
22
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 5 of 9 June 2005
AH312 / ECP200G
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
Application Note: Reduced Bias Configurations
The AH312 / ECP200 can be configured to be operated with lower bias current by varying the bias-adjust resistor - R1. The recommended circuit configurations shown previously in this datasheet have the device operating in Class A operation. Lowering the current has little effect on the gain, OIP3, and P1dB performance of the device, but will slightly lower the ACLR/ACPR performance of the device as shown below. An example of the measured data below represents the AH312 / ECP200 measured and configured for 2.14 GHz applications. It is expected that variation of the bias current for other frequency applications will produce similar performance results. AH312-PCB2140 Performance Data R1 (ohms) 15 22 43 62 110 Icq (mA) 800 700 600 500 400 Pdiss (W) 4.0 3.5 3.0 2.5 2.0 P1dB (dBm) +33.3 +33.3 +33.1 +33.0 +32.9 OIP3 (dBm) +51.4 +50.9 +50.9 +50.7 +47.3
10.2
2.14GHz Gain vs. Output Power
55
2.14GHz OIP3 vs. Output Power per Tone
9.8 50 9.4
OIP3 (dBm)
Gain (dB)
Idq=800mA 'Class A'
9
45
Idq=800mA 'Class A' Idq=700mA
Idq=700mA Idq=600mA
8.6
40
Idq=600mA Idq=500mA
Idq=500mA Idq=400mA
35 18 20 22 24 26 28 30 32 34 10
8.2
Idq=400mA
12 14 16 18 20 22 24
Output Power (dBm) W-CDMA ACLR vs. Output Channel Power
3GPP W-CDMA, Test Model 1 + 64 DPCH, 5 MHz offset
Power Out per Tone (dBm)
100
CW PAE vs. Output Power
Idq=800mA 'Class A' Idq=700mA Idq=600mA
-35 -40
Idq=800mA 'Class A' Idq=700mA Idq=500mA Idq=400mA Idq=600mA
ACLR (dBc)
-45 -50 -55 -60 -65 14
PAE (%)
Idq=500mA Idq=400mA
10
1
16 18 20 22 24 26
18
20
22
24
26
28
30
32
W-CDMA Channel Power Out (dBm)
CW Tone Power Out (dBm)
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 6 of 9 June 2005
AH312 / ECP200G
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
AH312-S8 (SOIC-8 Package) Mechanical Information
This package may contain lead-bearing materials. The plating material on the leads is SnPb.
Outline Drawing
Product Marking
The component will be marked with an "AH312-S8" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the "Application Notes" section.
ESD / MSL Information
ESD Rating: Value: Test: Standard:
Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +235 C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Config. Notes Land Pattern
1. A heatsink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters (inches). Angles are in degrees.
Thermal Specifications
Parameter
Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2)
-40 to +85 C 17.5 C / W 155 C
Notes: 1. The thermal resistance is referenced from the hottest part of the junction to the ground slug underneath the device. 2. This corresponds to the typical biasing condition of +5V, 800 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. Tjc is a function of the voltage at pins 6 and 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc
MTTF (million hrs)
Rating
100000
MTTF vs. GND Tab Temperature
10000
1000
100 60 70 80 90 100 110 Tab Temperature (C) 120
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 7 of 9 June 2005
AH312 / ECP200G
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
AH312-S8G (Lead-Free Package) Mechanical Information
This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260C reflow temperature) and lead (maximum 245C reflow temperature) soldering processes.
Outline Drawing
Product Marking
The component will be marked with an "AH312-S8G" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the "Application Notes" section.
ESD / MSL Information
ESD Rating: Value: Test: Standard:
Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114
MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. A heatsink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters (inches). Angles are in degrees.
Mounting Configuration / Land Pattern
Thermal Specifications
Parameter
Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2)
Rating
-40 to +85 C 17.5 C / W 155 C
100000
MTTF vs. GND Tab Temperature
Notes: 1. The thermal resistance is referenced from the hottest part of the junction to the ground slug underneath the device. 2. This corresponds to the typical biasing condition of +5V, 800 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. Tjc is a function of the voltage at pins 6 and 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc
MTTF (million hrs)
10000
1000
100 60 70 80 90 100 110 Tab Temperature (C) 120
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 8 of 9 June 2005
AH312 / ECP200G
2 Watt, High Linearity InGaP HBT Amplifier
Product Information
ECP200G (SOIC-8 Package) Mechanical Information
This package may contain lead-bearing materials. The plating material on the leads is SnPb.
Outline Drawing
Product Marking
The component will be marked with an "ECP200G" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the "Application Notes" section.
ESD / MSL Information
ESD Rating: Value: Test: Standard:
Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +235 C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. A heatsink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters (inches). Angles are in degrees.
Land Pattern
Thermal Specifications
Parameter
Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2)
-40 to +85 C 17.5 C / W 155 C
Notes: 1. The thermal resistance is referenced from the junctionto-case at a case temperature of 85 C. Tjc is a function of the voltage at pins 6 and 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 800 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C.
MTTF (million hrs)
Rating
100000
MTTF vs. GND Tab Temperature
10000
1000
100 60 70 80 90 100 110 Tab Temperature (C) 120
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 9 of 9 June 2005

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